The conformal properties of ALD coating can evenly cover 3D sapphire and other substrates, with consistent coating thickness at the top, side walls, and bottom, achieving a coating step coverage rate of over 90%.
Left image: The conformal properties of ALD coating can evenly cover 3D sapphire and other substrates, with consistent coating thickness at the top, side walls, and bottom, achieving a coating step coverage rate of over 90%.
Right figure: Comparison of insulation performance of Al2O3 produced by ALD process with different thicknesses. The thicker the thickness, the better the insulation performance; The insulation performance of the O3+TMA process is better than that of the H2O+TMA process. The breakdown voltage of Al2O3 thin film at 200 ℃ and 120nm reaches 10MV/cm (upper measurement limit).
Excellent conformality: cross-sectional SEM image of 110nm Al2O3 ALD film coating on a 3D sapphire.
Left image: The conformal properties of ALD coating can evenly cover 3D sapphire and other substrates, with consistent coating thickness at the top, side walls, and bottom, achieving a coating step coverage rate of over 90%.
Right figure: Comparison of insulation performance of Al2O3 produced by ALD process with different thicknesses. The thicker the thickness, the better the insulation performance; The insulation performance of the O3+TMA process is better than that of the H2O+TMA process. The breakdown voltage of Al2O3 thin film at 200 ℃ and 120nm reaches 10MV/cm (upper measurement limit).
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